Samsung’s latest V-NAND features highest storage capacity and bit density

Samsung Electronics has started producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry’s highest bit density.
Samsung SEC 231 V-NAND
At 1Tb, the new V-NAND features the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.

“Samsung has adopted its 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down,” said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics.

“Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations.”

Samsung achieved the industry’s highest bit density by enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface — the latest NAND flash standard — Samsung’s eighth-generation V-NAND features an input and output (I/O) speed of up to 2.4 gigabits per second (Gbps), a 1.2X boost over the previous generation. This will enable the new V-NAND to accommodate the performance requirements of PCIe 4.0, and later, PCIe 5.0.

Samsung said the eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers, while extending its use into the automotive market where reliability is especially critical.