Samsung Electronics has developed a new DRAM memory technology based on the Compute Express Link (CXL) interconnect standard that can upgrade the performances of data centres.
Samsung’s Double Data Rate 5 (DDR5) DRAM memory module supports the advanced CXL interface.
CXL is an open industry-standard interconnect based on the PCI Express (PCIe) 5.0 interface that enables high-speed, low latency communication between the host processor and devices, such as accelerators, memory buffers and smart input/output devices.
Conventional DDR-based memory has limited memory channels. Samsung said its CXL-based DRAM module can expand its memory capacity to the terabyte level while reducing system latency.
Samsung’s CXL-based DRAM module will be ideal to meet the demands of data-intensive applications, including artificial intelligence and high-performance computing (HPC) workloads in data centres.
Samsung applied an enterprise and data centre solid state drive form factor (EDSFF), which is used for large capacity solid state drives, to expand the memory capacity of its CXL-based DRAM.
The world’s largest memory chip producer also incorporated several controller and software solutions like memory mapping, interface converting and error management, so that the computing system can recognize the CXL-based memory and utilise it as the main memory.
The new DRAM module has been verified on next-generation server platforms from Intel, and it plans to commercialize the product in the future.