Samsung Electronics has started production of the 2nd-generation of 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4 DRAM for use in next-generation computing systems.
Samsung said the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions.
Gyoyoung Jin, president of Memory Business at Samsung Electronics, said: “Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10nm-class DRAM production to accommodate strong market demand and continue to strengthen our business competitiveness.”
Samsung’s 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30 percent productivity gain over the company’s 1st-generation 10nm-class 8Gb DDR4.
Samsung has improved the new 8Gb DDR4’s performance levels by about 10 percent and energy efficiency by 15 percent. The new 8Gb DDR4 can operate at 3,600 megabits per second (Mbps) per pin, compared to 3,200 Mbps of the company’s 1x-nm 8Gb DDR4.
Samsung said the new 10nm-class DRAM uses a unique air spacer that has been placed around its bit lines to dramatically decrease parasitic capacitance. Use of the air spacer enables higher level of scaling and rapid cell operation.
Samsung is accelerating its plans for much faster introductions of next-generation DRAM chips and systems, including DDR5, HBM3, LPDDR5 and GDDR6, for use in enterprise servers, mobile devices, supercomputers, HPC systems and high-speed graphics cards.
Samsung has completed validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers.
Samsung expects to increase the production volume of the 2nd-generation 10nm-class DRAM lineups and manufacture more of its mainstream 1st-generation 10nm-class DRAM.
