Samsung Electronics announced new V-NAND (Vertical NAND) memory solutions to address the latest requirements of data processing and storage systems.
Samsung — at the Samsung Tech Day and this year’s Flash Memory Summit — is showcasing solutions to address data processing challenges centered around the company’s latest V-NAND technology and an array of solid state drives (SSDs).
“Our new V-NAND technologies will offer smarter solutions for greater value by providing high data processing speeds, increased system scalability and ultra-low latency for today’s most demanding cloud-based applications,” said Gyoyoung Jin, head of Memory Business at Samsung Electronics.
The arrival of a 1Tb V-NAND chip next year will enable 2TB of memory in a single V-NAND package by stacking 16 1Tb dies and will represent one of the most important memory advances of the past decade.
Samsung is sampling the industry’s first 16-terabyte (TB) NGSFF SSD, which will improve the memory storage capacity and IOPS of 1U rack servers. Measuring 30.5mm x 110mm x 4.38mm, the Samsung NGSFF SSD provides hyper-scale data center servers with substantially improved space utilization and scaling options.
Utilizing the new NGSFF drive instead of M.2 drives in a 1U server can increase the storage capacity of the system by four times.
Samsung demonstrated a reference server system that delivers 576TB in a 1U rack, using 36 16TB NGSFF SSDs. The 1U reference system can process about 10 million random read IOPS, which triples the IOPS performance of a 1U server equipped with 2.5-inch SSDs. A petabyte capacity can be achieved using only two of the 576TB systems.
Samsung plans to begin mass producing its first NGSFF SSDs in the fourth quarter of this year, while working to standardize the form factor with industry partners.
Samsung also introduced its first Z-SSD product, the SZ985. Z-SSD will be used in data centers and enterprise systems dealing with extremely large, data-intensive tasks such as real-time “big data” analytics and high-performance server caching. Several of its customers will be integrating the Z-SSD in upcoming applications.
The Samsung SZ985 requires 15 microseconds of read latency time which is approximately a seventh of the read latency of an NVMe SSD. At the application level, the use of Samsung’s Z-SSDs can reduce system response time by up to 12 times, compared to using NVMe SSDs.
The latest Z-SSD will play a pivotal role in eliminating storage bottlenecks in the enterprise and in improving the total cost of ownership (TCO).
