Samsung Electronics is increasing the production of its 8-gigabyte (GB) High Bandwidth Memory-2 (HBM2) to meet market needs applications including artificial intelligence, HPC (high-performance computing), advanced graphics, network systems and enterprise servers.
Samsung anticipates that its volume production of the 8GB HBM2 will cover more than 50 percent of its HBM2 production by the first half of next year.
HBM2, introduced in June 2016, boasts a 256GB/s data transmission bandwidth, offering more than 8-fold increase over a 32GB/s GDDR5 DRAM chip. The 8GB solution, which has double capacity of 4GB HBM2, contributes to improving system performance and energy efficiency.
“By increasing production of the 8GB HBM2 solution available, we are aiming to ensure that global IT system manufacturers have sufficient supply for timely development of new and upgraded systems,” said Jaesoo Han, executive vice president, Memory Sales & Marketing team at Samsung Electronics.
8GB HBM2 consists of eight 8-gigabit (Gb) HBM2 dies and a buffer die at the bottom of the stack, which are all vertically interconnected by TSVs and microbumps. With each die containing over 5,000 TSVs, a single Samsung 8GB HBM2 package has over 40,000 TSVs.
