Toshiba America Electronic Components announced a new line-up of high-speed, high-voltage MOSFETs for switching voltage regulator designs.
Available with 800V and 900V ratings, the four N-channel devices are TK4A80E, TK5A80E, TK3A90E, and TK5A90E.
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These are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below 5.0A.
The new enhancement mode MOSFETs are based on Toshiba’s π-MOS VIII (Pi-MOS-8), the company’s eighth generation planar semiconductor process.
It combines high levels of cell integration with optimized cell design. This technology supports reduced gate charge and capacitance compared to prior generations, without losing the benefits of low RDS(ON).
The MOSFETs offer an ultra-low maximum leakage current of only 10μA (VDS = 640V for the 800V device; VDS = 720V for the 900V device) and a gate threshold voltage range of 2.5V to 4.0V.
Toshiba said all of the devices are supplied in a standard TO-220SIS form factor.
