Samsung Electronics on Tuesday said that it is mass producing the industry’s first 12-gigabit LPDDR4 mobile DRAM, based on its 20-nanometer process technology.
The production of 12Gb LPDDR4 mobile DRAM is likely to help OEMs to accelerate their moves to the next generation of mobile devices. Moreover, it will give mobile consumers enhanced user experiences.
The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide.
“We intend to collaborate with our customers to move beyond premium smartphones and tablets in creating new digital markets that embrace next-generation mobile DRAM,” said Joo Sun Choi, executive vice president of Memory Sales and Marketing at Samsung Electronics.
Compared to the preceding 20nm-based 8Gb LPDDR4, the 12Gb version is more than 30 percent faster at 4,266 megabits per second (Mbps). It is twice as fast as DDR4 DRAM for PCs, while consuming 20 percent less energy.
In addition, manufacturing productivity of the 12Gb LPDDR4 has been raised more than 50 percent over that of 20nm-class 8Gb LPDDR4, which will further fuel demand for higher memory capacity in flagship mobile devices.
Samsung said its 12Gb LPDDR4 enables 3 gigabyte or 6GB of mobile DRAM in a single package using just two chips and four chips respectively, while being the only solution that can provide a 6GB LPDDR4 package. The 6GB package can easily fit into the same space used for 3GB LPDDR4 packages currently available.
In August, Samsung Electronics has started mass production of 256Gb 3D Vertical NAND flash memory based on 48 layers of 3-bit multi-level-cell arrays for use in solid state drives (SSDs). The new chip doubles the capacity of Samsung’s existing SSD line-ups while providing ideal solution for multi-terabyte SSDs.
