Samsung Electronics today said it kicked off manufacturing operations at its memory fabrication line in Xi’an, China to produce advanced NAND flash memory chips: 3D V-NAND.
The Korean company took 20 months to build the new manufacturing facility since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land, said Samsung.
By starting operations of its Xi’an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here. It is also laying the foundation for a more stable supply of memory products to its customers.
Samsung plans to complete construction of its entire Xi’an complex, which includes an assembly facility and test line, by the end of this year, said Samsung Electronics Vice Chairman and CEO Oh-Hyun Kwon.
