Samsung starts producing world’s fastest 4GB HBM DRAM

Samsung Electronics has begun mass production of the industry’s first 4-gigabyte (GB) DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface.

The DRAM package finds use in high performance computing (HPC), advanced graphics and network systems, as well as enterprise servers.
Samsung indicates that it will sport more than seven times the speed of current DRAM performance limitations, resulting in faster responsiveness for high-end computing tasks. This follows the company’s introduction of a 128GB 3D TSV DDR4 registered dual inline memory module (RDIMM), last October.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics.
“Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market,” Chun added.
Utilizing Samsung’s most efficient 20-nanometer process technology and advanced HBM chip design, the 4GB HBM2 package constitutes a buffer die at the bottom and four 8GB core dies on top. Samsung conveyed that these are vertically interconnected by TSV holes and microbumps. Samsung’s new DRAM package also doubles the previous generation’s bandwidth with 256GBps.
This totals to a more than seven-fold increase over the 36GBps bandwidth of a 4GB GDDR5 DRAM chip, which has the fastest data speed per pin (9GBps) among currently manufactured DRAM chips. Additionally, it allows for enhanced power efficiency by doubling the bandwidth per watt over a 4GB-GDDR5-based solution all the while embedding ECC functionality for high reliability.
A single 8GB HBM2 die contains over 5,000 TSV holes, which is more than 36 times that of a 8GB TSV DDR4 die, offering a dramatic improvement in data transmission performance compared to typical wire-bonding based packages.
Samsung’s 4GB HBM2 also enables enhanced power efficiency by doubling the bandwidth per watt over a 4GB-GDDR5-based solution, and embeds ECC (error-correcting code) functionality for ensuring high reliability.
Samsung also plans to produce an 8GB HBM2 DRAM package within this year. By specifying 8GB HBM2 DRAM in graphics cards, a space of up-to 95 percent will be saved and will be available to the designers, compared to using GDDR5 DRAM, offering more optimal solutions for compact devices that require high-level graphics computing capabilities.
The company is to continuously increase the production volume of its HBM2 DRAM over the remainder of the year to meet expected growth in market demand for network systems and servers. Samsung will also expand its line-up of HBM2 DRAM solutions to stay ahead in the high-performance computing market and extend its lead in premium memory production.