Samsung Electronics today announced that it started the production of DDR3 memory, based on a new 20 nanometer process technology – for PC and mobile markets.
Samsung is utilizing currently available immersion ArF lithography, in 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.
IT analyst firm Gartner says the global DRAM market will grow to $37.9 billion in 2014 from $35.6 billion in 2013.
With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor.
Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.
The company said its modified double patterning technology marks a new milestone, by enabling 20nm DDR3 production using current photolithography equipment and establishing the core technology for the next generation of 10nm-class DRAM production.
Samsung also created ultrathin dielectric layers of cell capacitors with an unprecedented uniformity, which has resulted in higher cell performance.
Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class DDR3.
The new 20nm 4Gb DDR3- based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer process technology. This improvement provides the basis for delivering the industry’s most advanced green IT solutions to global companies.
Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics, said: “Samsung will continue to deliver next-generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers.”
