Samsung Electronics commenced mass production of system-on-chip (SoC) products with 10-nanometer (nm) FinFET technology.
The 10nm FinFET process (10LPE) adopts a 3D transistor structure with additional enhancements in both process technology and design enablement compared to its 14nm predecessor.
It allows up to 30-percent increase in area efficiency with 27-percent higher performance or 40-percent lower power consumption.
In order to overcome scaling limitations, the new offering has adopted triple-patterning. Moreover, bi-directional routing is also used to retain design and routing flexibility from prior nodes.
In January 2015, Samsung had started mass production of the industry’s first FinFET mobile application processor (AP).
Following the introduction of 10nm process (10LPE), its second generation process (10LPP) with performance boost is targeted for mass production in the second half of 2017.
Samsung conveyed that SoCs with 10nm process technology will be used in digital devices launching early next year and are expected to become more widely available throughout 2017.
